IndiumV3, Chine, Analysis, bibRecord, 000254

Ferromagnetism in Cr doped In2O3

Identifieur interne : 000254 ( Chine/Analysis ); précédent : 000253; suivant : 000255

Ferromagnetism in Cr doped In2O3

Auteurs : RBID : Pascal:13-0161912

Descripteurs français

Pascal (Inist)
- Addition chrome, Couche mince, Dopage, Pression partielle, Basse pression, Dichroïsme circulaire magnétique, Moment magnétique, Magnétorésistance, Effet Hall, Propriété électrique, Semiconducteur semimagnétique, Addition indium, Dépôt laser pulsé, Méthode ablation laser, Oxyde d'indium, Chrome, Oxyde de chrome, In2O3, Substrat LaAlO3, 7350, 8115F.
Wicri :
- concept : Dopage, Chrome.

English descriptors

KwdEn :
- Chromium, Chromium additions, Chromium oxide, Doping, Electrical properties, Hall effect, Indium additions, Indium oxide, Laser ablation technique, Low pressure, Magnetic circular dichroism, Magnetic moments, Magnetoresistance, Partial pressure, Pulsed laser deposition, Semimagnetic semiconductors, Thin films.

Abstract

In this work, we deposited 5%Ta-5%Cr-In₂O₃ film on LaAlO₃(001) substrate as an example to investigate the effect of electron doping, oxygen partial pressure and thickness on the ferromagnetism. The ferromagnetism is strongly dependent on oxygen partial pressure. Films deposited under low oxygen partial pressure leads to the enhancement of ferromagnetism. However, the electron doping through Ta dopant has a limit influence on the magnetism, suggesting that the film may not be carrier-mediated. Through the X-ray magnetic circular dichroism study, no magnetic moment can be found in Cr, In and O edge, suggesting that the ferromagnetism may be originated from defects. Magnetoresistance and anomalous Hall effect can be observed at low temperature in the film deposited under low oxygen partial pressure. Hence, these two properties may not be as an indication of intrinsic ferromagnetism.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000E88
to stream Main, to step Repository: 000C94
to stream Chine, to step Extraction: 000254

Links to Exploration step

Pascal:13-0161912

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ferromagnetism in Cr doped In<sub>2</sub>
O<sub>3</sub>
</title>
<author><name sortKey="Yi, J B" uniqKey="Yi J">J. B. Yi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, University of New South Wales</s1>
<s2>Kensington, NSW 2052</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Kensington, NSW 2052</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bao, N N" uniqKey="Bao N">N. N. Bao</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, National University of Singapore 119260</s1>
<s3>SGP</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>Department of Materials Science and Engineering, National University of Singapore 119260</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Luo, X" uniqKey="Luo X">X. Luo</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, University of New South Wales</s1>
<s2>Kensington, NSW 2052</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Kensington, NSW 2052</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Fan, H M" uniqKey="Fan H">H. M. Fan</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Chemical Engineering, Northwest University</s1>
<s2>Xi'an, Shanxi 710069</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Xi'an, Shanxi 710069</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Liu, T" uniqKey="Liu T">T. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute for Synchrotron Radiation, Karlsruhe Institute of Technology</s1>
<s2>76344 Eggenstein-Leopoldshafen</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>76344 Eggenstein-Leopoldshafen</wicri:noRegion>
<wicri:noRegion>Karlsruhe Institute of Technology</wicri:noRegion>
<wicri:noRegion>76344 Eggenstein-Leopoldshafen</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Li, S" uniqKey="Li S">S. Li</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Materials Science and Engineering, University of New South Wales</s1>
<s2>Kensington, NSW 2052</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Kensington, NSW 2052</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0161912</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0161912 INIST</idno>
<idno type="RBID">Pascal:13-0161912</idno>
<idno type="wicri:Area/Main/Corpus">000E88</idno>
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<idno type="wicri:Area/Chine/Extraction">000254</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chromium</term>
<term>Chromium additions</term>
<term>Chromium oxide</term>
<term>Doping</term>
<term>Electrical properties</term>
<term>Hall effect</term>
<term>Indium additions</term>
<term>Indium oxide</term>
<term>Laser ablation technique</term>
<term>Low pressure</term>
<term>Magnetic circular dichroism</term>
<term>Magnetic moments</term>
<term>Magnetoresistance</term>
<term>Partial pressure</term>
<term>Pulsed laser deposition</term>
<term>Semimagnetic semiconductors</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Addition chrome</term>
<term>Couche mince</term>
<term>Dopage</term>
<term>Pression partielle</term>
<term>Basse pression</term>
<term>Dichroïsme circulaire magnétique</term>
<term>Moment magnétique</term>
<term>Magnétorésistance</term>
<term>Effet Hall</term>
<term>Propriété électrique</term>
<term>Semiconducteur semimagnétique</term>
<term>Addition indium</term>
<term>Dépôt laser pulsé</term>
<term>Méthode ablation laser</term>
<term>Oxyde d'indium</term>
<term>Chrome</term>
<term>Oxyde de chrome</term>
<term>In2O3</term>
<term>Substrat LaAlO3</term>
<term>7350</term>
<term>8115F</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
<term>Chrome</term>
</keywords>
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</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this work, we deposited 5%Ta-5%Cr-In<sub>2</sub>
O<sub>3</sub>
 film on LaAlO<sub>3</sub>
(001) substrate as an example to investigate the effect of electron doping, oxygen partial pressure and thickness on the ferromagnetism. The ferromagnetism is strongly dependent on oxygen partial pressure. Films deposited under low oxygen partial pressure leads to the enhancement of ferromagnetism. However, the electron doping through Ta dopant has a limit influence on the magnetism, suggesting that the film may not be carrier-mediated. Through the X-ray magnetic circular dichroism study, no magnetic moment can be found in Cr, In and O edge, suggesting that the ferromagnetism may be originated from defects. Magnetoresistance and anomalous Hall effect can be observed at low temperature in the film deposited under low oxygen partial pressure. Hence, these two properties may not be as an indication of intrinsic ferromagnetism.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Ferromagnetism in Cr doped In<sub>2</sub>
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<fA11 i1="01" i2="1"><s1>YI (J. B.)</s1>
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<fA14 i1="01"><s1>School of Materials Science and Engineering, University of New South Wales</s1>
<s2>Kensington, NSW 2052</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA14 i1="02"><s1>Department of Materials Science and Engineering, National University of Singapore 119260</s1>
<s3>SGP</s3>
<sZ>2 aut.</sZ>
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<fA14 i1="03"><s1>School of Chemical Engineering, Northwest University</s1>
<s2>Xi'an, Shanxi 710069</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
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<fA14 i1="04"><s1>Institute for Synchrotron Radiation, Karlsruhe Institute of Technology</s1>
<s2>76344 Eggenstein-Leopoldshafen</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
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<fA21><s1>2013</s1>
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<fC01 i1="01" l="ENG"><s0>In this work, we deposited 5%Ta-5%Cr-In<sub>2</sub>
O<sub>3</sub>
 film on LaAlO<sub>3</sub>
(001) substrate as an example to investigate the effect of electron doping, oxygen partial pressure and thickness on the ferromagnetism. The ferromagnetism is strongly dependent on oxygen partial pressure. Films deposited under low oxygen partial pressure leads to the enhancement of ferromagnetism. However, the electron doping through Ta dopant has a limit influence on the magnetism, suggesting that the film may not be carrier-mediated. Through the X-ray magnetic circular dichroism study, no magnetic moment can be found in Cr, In and O edge, suggesting that the ferromagnetism may be originated from defects. Magnetoresistance and anomalous Hall effect can be observed at low temperature in the film deposited under low oxygen partial pressure. Hence, these two properties may not be as an indication of intrinsic ferromagnetism.</s0>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>05</s5>
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<s5>05</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>Addition indium</s0>
<s5>12</s5>
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<fC03 i1="12" i2="3" l="ENG"><s0>Indium additions</s0>
<s5>12</s5>
</fC03>
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<s5>13</s5>
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<fC03 i1="13" i2="3" l="ENG"><s0>Pulsed laser deposition</s0>
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<fC03 i1="14" i2="3" l="FRE"><s0>Méthode ablation laser</s0>
<s5>14</s5>
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<fC03 i1="14" i2="3" l="ENG"><s0>Laser ablation technique</s0>
<s5>14</s5>
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<s5>15</s5>
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<s2>NC</s2>
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<fC03 i1="16" i2="3" l="ENG"><s0>Chromium</s0>
<s2>NC</s2>
<s5>16</s5>
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<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Chromium oxide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Cromo óxido</s0>
<s5>17</s5>
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<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Substrat LaAlO3</s0>
<s4>INC</s4>
<s5>47</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8115F</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fN21><s1>140</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
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{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:13-0161912
   |texte=   Ferromagnetism in Cr doped In2O3
}}

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Serveur d'exploration sur l'Indium

Ferromagnetism in Cr doped In2O3

Ferromagnetism in Cr doped In2O3

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri